JAN2N2919U

Microchip
Transistors - Bipolar (BJT) - Arrays
3-SMD, No Lead
TRANS 2NPN 60V 0.03A
Date Sheet

在庫數 5

小計金額 $0.00000

仕様よくある質問

Mounting Type：Surface Mount
Package / Case：3-SMD, No Lead
Surface Mount：YES
Supplier Device Package：3-SMD
Number of Terminals：6
Transistor Element Material：SILICON
Package：Bulk
Current-Collector (Ic) (Max)：30mA
Base Product Number：2N2919
Mfr：Microchip Technology
Product Status：Active
Package Description：SMALL OUTLINE, R-PDSO-N6
Package Style：SMALL OUTLINE
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：20
Operating Temperature-Max：200 °C
Rohs Code：No
Manufacturer Part Number：JAN2N2919U
Package Shape：RECTANGULAR
Manufacturer：Microsemi Corporation
Number of Elements：2
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：5.24
Operating Temperature：200°C (TJ)
Series：Military, MIL-PRF-19500/355
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
HTS Code：8541.21.00.95
Subcategory：Other Transistors
Technology：Si
Terminal Position：DUAL
Terminal Form：NO LEAD
Peak Reflow Temperature (Cel)：235
Reach Compliance Code：compliant
Reference Standard：MIL-19500
JESD-30 Code：R-PDSO-N6
Qualification Status：Qualified
Configuration：SEPARATE, 2 ELEMENTS
Power - Max：350mW
Polarity/Channel Type：NPN
Transistor Type：2 NPN (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce：150 @ 1mA, 5V
Current - Collector Cutoff (Max)：10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max)：60V
Frequency - Transition：-
Power Dissipation-Max (Abs)：1.25 W
Collector Current-Max (IC)：0.03 A
DC Current Gain-Min (hFE)：150
Collector-Emitter Voltage-Max：60 V

在庫數 5

小計金額 $0.00000

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JAN2N2919U