画像はあくまで参考です。
MRF555
-
Microchip
-
Transistors - Bipolar (BJT) - RF
- Trans GP BJT NPN 16V 0.5A 4-Pin Power Macro
Date Sheet
在庫數 3030
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:Obsolete (Last Updated: 2 months ago)
- Mount:Surface Mount
- Surface Mount:YES
- Number of Pins:4
- Number of Terminals:4
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:16 V
- RoHS:Compliant
- Package Style:DISK BUTTON
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Rohs Code:No
- Manufacturer Part Number:MRF555
- Package Shape:ROUND
- Manufacturer:Microsemi Corporation
- Number of Elements:1
- Part Life Cycle Code:Transferred
- Ihs Manufacturer:MICROSEMI CORP
- Risk Rank:5.36
- Packaging:Bulk
- JESD-609 Code:e0
- Pbfree Code:No
- ECCN Code:EAR99
- Terminal Finish:Tin/Lead (Sn/Pb)
- Subcategory:Other Transistors
- Max Power Dissipation:3 W
- Terminal Position:RADIAL
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- JESD-30 Code:O-PRDB-F4
- Qualification Status:Not Qualified
- Configuration:SINGLE
- Case Connection:COLLECTOR
- Polarity/Channel Type:NPN
- Collector Emitter Voltage (VCEO):16 V
- Max Collector Current:500 mA
- Gain:13 dB
- Collector Base Voltage (VCBO):30 V
- Power Dissipation-Max (Abs):3 W
- Collector Current-Max (IC):0.5 A
- DC Current Gain-Min (hFE):50
- Collector-Emitter Voltage-Max:16 V
- Highest Frequency Band:ULTRA HIGH FREQUENCY BAND
- Collector-Base Capacitance-Max:5.5 pF
- Radiation Hardening:No
在庫數 3030
小計金額 $0.00000











