2SD1980TL

ROHM Semiconductor
Transistors - Bipolar (BJT) - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TRANS NPN DARL 100V 2A SOT-428
Date Sheet

在庫數 5000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：20 Weeks
Contact Plating：Copper, Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：100V
Collector-Emitter Saturation Voltage：1.5V
Frequency - Gain Bandwidth Product (GBP)：80MHz
Power Dissipation (Max)：1W
Number of Elements：1
hFEMin：1000
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
Published：1999
JESD-609 Code：e2
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
Termination：SMD/SMT
ECCN Code：EAR99
Terminal Finish：Tin/Copper (Sn98Cu2)
Additional Feature：BUILT IN BIAS RESISTANCE RATIO IS 0.0857
HTS Code：8541.29.00.75
Voltage - Rated DC：100V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：2A
Time@Peak Reflow Temperature-Max (s)：10
Base Part Number：2SD1980
JESD-30 Code：R-PSSO-G2
Polarity：NPN
Element Configuration：Single
Power Dissipation：1W
Case Connection：COLLECTOR
Power - Max：10W
Transistor Type：NPN - Darlington
Collector Emitter Voltage (VCEO)：100V
Max Collector Current：2A
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 1A 2V
Current - Collector Cutoff (Max)：10μA ICBO
Vce Saturation (Max) @ Ib, Ic：1.5V @ 1mA, 1A
Transition Frequency：80MHz
Max Breakdown Voltage：100V
Collector Base Voltage (VCBO)：100V
Emitter Base Voltage (VEBO)：6V
Continuous Collector Current：2A
Height：2.3mm
Length：6.5mm
Width：5.5mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 5000

小計金額 $0.00000

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2SD1980TL