画像はあくまで参考です。

在庫數 2000

小計金額 $0.00000

仕様 よくある質問
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-218-3
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:80V
  • Collector-Emitter Saturation Voltage:2V
  • Power Dissipation (Max):125W
  • Number of Elements:1
  • Operating Temperature:150°C TJ
  • Packaging:Tube
  • JESD-609 Code:e0
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • ECCN Code:EAR99
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • Voltage - Rated DC:80V
  • Current Rating:10A
  • Base Part Number:TIP141
  • JESD-30 Code:R-PSFM-T3
  • Polarity:NPN
  • Element Configuration:Single
  • Power Dissipation:125W
  • Transistor Application:SWITCHING
  • Transistor Type:NPN - Darlington
  • Collector Emitter Voltage (VCEO):80V
  • Max Collector Current:10A
  • DC Current Gain (hFE) (Min) @ Ic, Vce:1000 @ 5A 4V
  • Current - Collector Cutoff (Max):2mA
  • Vce Saturation (Max) @ Ib, Ic:3V @ 40mA, 10A
  • Collector Base Voltage (VCBO):80V
  • Emitter Base Voltage (VEBO):5V
  • Continuous Collector Current:10A
  • VCEsat-Max:3 V
  • REACH SVHC:No SVHC
  • Radiation Hardening:No
  • RoHS Status:Non-RoHS Compliant
  • Lead Free:Contains Lead

在庫數 2000

小計金額 $0.00000