MJD210G

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TRANS PNP 25V 5A DPAK
Date Sheet

在庫數 6585

1+： $0.79267
10+： $0.74780
100+： $0.70547
500+： $0.66554
1000+： $0.62787

小計金額 $0.79267

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount：YES
Number of Pins：3
Weight：4.535924g
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：25V
Collector-Emitter Saturation Voltage：1.8V
Frequency - Gain Bandwidth Product (GBP)：65MHz
Power Dissipation (Max)：1.4W
Number of Elements：1
hFEMin：70
Operating Temperature：-65°C~150°C TJ
Packaging：Tube
Published：2006
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Voltage - Rated DC：-25V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-5A
Frequency：65MHz
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MJD210
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Power Dissipation：1.4W
Case Connection：COLLECTOR
Transistor Application：AMPLIFIER
Polarity/Channel Type：PNP
Transistor Type：PNP
Collector Emitter Voltage (VCEO)：25V
Max Collector Current：5A
DC Current Gain (hFE) (Min) @ Ic, Vce：45 @ 2A 1V
Current - Collector Cutoff (Max)：100nA ICBO
Vce Saturation (Max) @ Ib, Ic：1.8V @ 1A, 5A
Transition Frequency：65MHz
Collector Base Voltage (VCBO)：40V
Emitter Base Voltage (VEBO)：8V
Height：2.3876mm
Length：6.7056mm
Width：6.223mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 6585

1+： $0.79267
10+： $0.74780
100+： $0.70547
500+： $0.66554
1000+： $0.62787

小計金額 $0.79267

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MJD210G