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2N6109G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-220-3
- ON SEMICONDUCTOR 2N6109G POWER TRANSISTOR, PNP, -50V, TO-220
Date Sheet
在庫數 2000
- 1+: $0.39054
- 10+: $0.36843
- 100+: $0.34758
- 500+: $0.32790
- 1000+: $0.30934
小計金額 $0.39054
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 5 days ago)
- Factory Lead Time:2 Weeks
- Contact Plating:Tin
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Surface Mount:NO
- Number of Pins:3
- Weight:4.535924g
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:50V
- Collector-Emitter Saturation Voltage:3.5V
- Number of Elements:1
- hFEMin:30
- Operating Temperature:-65°C~150°C TJ
- Packaging:Tube
- Published:2003
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Additional Feature:LEADFORM OPTIONS ARE AVAILABLE
- Voltage - Rated DC:-50V
- Max Power Dissipation:40W
- Peak Reflow Temperature (Cel):260
- Current Rating:7A
- Frequency:10MHz
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:2N6109
- Pin Count:3
- Element Configuration:Single
- Power Dissipation:40W
- Case Connection:COLLECTOR
- Transistor Application:SWITCHING
- Gain Bandwidth Product:10MHz
- Polarity/Channel Type:PNP
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):50V
- Max Collector Current:7A
- DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 2.5A 4V
- Current - Collector Cutoff (Max):1mA
- JEDEC-95 Code:TO-220AB
- Vce Saturation (Max) @ Ib, Ic:3.5V @ 3A, 7A
- Transition Frequency:10MHz
- Collector Base Voltage (VCBO):60V
- Emitter Base Voltage (VEBO):5V
- Height:15.75mm
- Length:10.28mm
- Width:4.82mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free











