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MJD3055T4
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- TRANS NPN 60V 10A DPAK
Date Sheet
在庫數 35828
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：OBSOLETE (Last Updated: 6 days ago)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount：YES
- Number of Pins：3
- Transistor Element Material：SILICON
- Power Dissipation (Max)：1.75W
- Number of Elements：1
- Collector-Emitter Breakdown Voltage：60V
- Collector-Emitter Saturation Voltage：1.1V
- Frequency - Gain Bandwidth Product (GBP)：2MHz
- hFEMin：20
- Operating Temperature：-55°C~150°C TJ
- Packaging：Cut Tape (CT)
- Published：2002
- JESD-609 Code：e0
- Pbfree Code：no
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- HTS Code：8541.29.00.95
- Voltage - Rated DC：60V
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：235
- Reach Compliance Code：not_compliant
- Current Rating：10A
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：MJD3055
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Element Configuration：Single
- Power Dissipation：20W
- Case Connection：COLLECTOR
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：NPN
- Transistor Type：NPN
- Collector Emitter Voltage (VCEO)：8V
- Max Collector Current：10A
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 4A 4V
- Current - Collector Cutoff (Max)：50μA
- Vce Saturation (Max) @ Ib, Ic：1.1V @ 400mA, 4A
- Transition Frequency：2MHz
- Max Breakdown Voltage：60V
- Collector Base Voltage (VCBO)：70V
- Emitter Base Voltage (VEBO)：5V
- REACH SVHC：No SVHC
- RoHS Status：Non-RoHS Compliant
- Lead Free：Lead Free
在庫數 35828
小計金額 $0.00000
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