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2N1613

在庫數 5500

小計金額 $0.00000

仕様 よくある質問
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Transistor Element Material:SILICON
  • Collector-Emitter Breakdown Voltage:50V
  • Number of Elements:1
  • hFEMin:20
  • Operating Temperature:-65°C~200°C TJ
  • Packaging:Tube
  • JESD-609 Code:e0
  • Part Status:Obsolete
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:3
  • Terminal Finish:Tin/Lead (Sn/Pb)
  • HTS Code:8541.21.00.95
  • Voltage - Rated DC:75V
  • Max Power Dissipation:800mW
  • Terminal Position:BOTTOM
  • Terminal Form:WIRE
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:not_compliant
  • Current Rating:500mA
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • Base Part Number:2N16
  • JESD-30 Code:O-MBCY-W3
  • Qualification Status:Not Qualified
  • Element Configuration:Single
  • Gain Bandwidth Product:80MHz
  • Polarity/Channel Type:NPN
  • Transistor Type:NPN
  • Collector Emitter Voltage (VCEO):1.5V
  • Max Collector Current:500mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA 10V
  • Current - Collector Cutoff (Max):10nA ICBO
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 15mA, 150mA
  • Transition Frequency:60MHz
  • Collector Base Voltage (VCBO):75V
  • Emitter Base Voltage (VEBO):7V
  • RoHS Status:ROHS3 Compliant
  • Lead Free:Lead Free

在庫數 5500

小計金額 $0.00000