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BC618RL1
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- TRANS NPN DARL 55V 1A TO-92
Date Sheet
在庫數 0
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：LAST SHIPMENTS (Last Updated: 3 days ago)
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins：3
- Transistor Element Material：SILICON
- Power Dissipation (Max)：625mW
- Number of Elements：1
- Collector-Emitter Breakdown Voltage：55V
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Reel (TR)
- Published：2006
- JESD-609 Code：e0
- Pbfree Code：no
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin/Lead (Sn/Pb)
- Additional Feature：EUROPEAN PART NUMBER
- HTS Code：8541.21.00.75
- Power Rating：300mW
- Voltage - Rated DC：55V
- Terminal Position：BOTTOM
- Peak Reflow Temperature (Cel)：240
- Reach Compliance Code：not_compliant
- Current Rating：1A
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：BC618
- Qualification Status：Not Qualified
- Polarity：NPN
- Element Configuration：Single
- Power Dissipation：625mW
- Transistor Application：AMPLIFIER
- Transistor Type：NPN - Darlington
- Collector Emitter Voltage (VCEO)：1.1V
- Max Collector Current：1A
- DC Current Gain (hFE) (Min) @ Ic, Vce：10000 @ 200mA 5V
- Current - Collector Cutoff (Max)：50nA
- Vce Saturation (Max) @ Ib, Ic：1.1V @ 200μA, 200mA
- Transition Frequency：150MHz
- Frequency - Transition：150MHz
- Collector Base Voltage (VCBO)：80V
- Emitter Base Voltage (VEBO)：12V
- Continuous Collector Current：1A
- RoHS Status：Non-RoHS Compliant
- Lead Free：Contains Lead
在庫數 0
小計金額 $0.00000
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