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MJD210
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Bipolar Transistors - BJT 5A 25V 12.5W PNP
Date Sheet
在庫數 2000
小計金額 $0.00000
仕様 よくある質問
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins：3
- Transistor Element Material：SILICON
- Frequency - Gain Bandwidth Product (GBP)：65MHz
- Power Dissipation (Max)：1.4W
- Number of Elements：1
- Current-Collector (Ic) (Max)：5A
- Collector-Emitter Saturation Voltage：1.8V
- hFEMin：70
- Collector-Emitter Breakdown Voltage：25V
- Operating Temperature：-65°C~150°C TJ
- Packaging：Tube
- Published：2005
- JESD-609 Code：e0
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Terminal Finish：Tin/Lead (Sn/Pb)
- Voltage - Rated DC：-25V
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：240
- Reach Compliance Code：not_compliant
- Current Rating：-5A
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：MJD210
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Element Configuration：Single
- Case Connection：COLLECTOR
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：1.8V
- Max Collector Current：5A
- DC Current Gain (hFE) (Min) @ Ic, Vce：45 @ 2A 1V
- Current - Collector Cutoff (Max)：100nA ICBO
- Vce Saturation (Max) @ Ib, Ic：1.8V @ 1A, 5A
- Transition Frequency：65MHz
- Collector Base Voltage (VCBO)：40V
- Emitter Base Voltage (VEBO)：8V
- RoHS Status：Non-RoHS Compliant
- Lead Free：Contains Lead
在庫數 2000
小計金額 $0.00000
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