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STL36DN6F7

在庫數 22721

  • 1+: $0.35354
  • 10+: $0.33353
  • 100+: $0.31465
  • 500+: $0.29684
  • 1000+: $0.28004

小計金額 $0.35354

仕様 よくある質問
  • Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time:38 Weeks
  • Mounting Type:Surface Mount
  • Package / Case:8-PowerVDFN
  • Surface Mount:YES
  • Transistor Element Material:SILICON
  • Manufacturer Package Identifier:PowerFLATTM_8256945_DI_typeC
  • Current - Continuous Drain (Id) @ 25℃:33A Tc
  • Number of Elements:2
  • Turn Off Delay Time:12.1 ns
  • Operating Temperature:-55°C~175°C TJ
  • Packaging:Tape & Reel (TR)
  • Series:STripFET™
  • JESD-609 Code:e3
  • Part Status:Active
  • Moisture Sensitivity Level (MSL):1 (Unlimited)
  • Number of Terminations:6
  • Terminal Finish:Matte Tin (Sn)
  • Peak Reflow Temperature (Cel):260
  • Reach Compliance Code:not_compliant
  • Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
  • Base Part Number:STL36
  • JESD-30 Code:R-PDSO-F6
  • Number of Channels:2
  • Operating Mode:ENHANCEMENT MODE
  • Power Dissipation:58W
  • Case Connection:DRAIN
  • Turn On Delay Time:7.85 ns
  • FET Type:2 N-Channel (Dual)
  • Transistor Application:SWITCHING
  • Rds On (Max) @ Id, Vgs:27m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id:4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds:420pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
  • Continuous Drain Current (ID):33A
  • Gate to Source Voltage (Vgs):20V
  • Drain Current-Max (Abs) (ID):36A
  • Drain to Source Breakdown Voltage:60V
  • Pulsed Drain Current-Max (IDM):144A
  • FET Technology:METAL-OXIDE SEMICONDUCTOR
  • Max Junction Temperature (Tj):175°C
  • FET Feature:Standard
  • Height:1mm
  • RoHS Status:ROHS3 Compliant

在庫數 22721

  • 1+: $0.35354
  • 10+: $0.33353
  • 100+: $0.31465
  • 500+: $0.29684
  • 1000+: $0.28004

小計金額 $0.35354