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STL36DN6F7
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STMicroelectronics
-
Transistors - FETs, MOSFETs - Arrays
- 8-PowerVDFN
- MOSFET 2 N-CH 60V 33A POWERFLAT
Date Sheet
在庫數 22721
- 1+: $0.35354
- 10+: $0.33353
- 100+: $0.31465
- 500+: $0.29684
- 1000+: $0.28004
小計金額 $0.35354
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:38 Weeks
- Mounting Type:Surface Mount
- Package / Case:8-PowerVDFN
- Surface Mount:YES
- Transistor Element Material:SILICON
- Manufacturer Package Identifier:PowerFLATTM_8256945_DI_typeC
- Current - Continuous Drain (Id) @ 25℃:33A Tc
- Number of Elements:2
- Turn Off Delay Time:12.1 ns
- Operating Temperature:-55°C~175°C TJ
- Packaging:Tape & Reel (TR)
- Series:STripFET™
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:6
- Terminal Finish:Matte Tin (Sn)
- Peak Reflow Temperature (Cel):260
- Reach Compliance Code:not_compliant
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:STL36
- JESD-30 Code:R-PDSO-F6
- Number of Channels:2
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:58W
- Case Connection:DRAIN
- Turn On Delay Time:7.85 ns
- FET Type:2 N-Channel (Dual)
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:27m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:420pF @ 30V
- Gate Charge (Qg) (Max) @ Vgs:8nC @ 10V
- Continuous Drain Current (ID):33A
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):36A
- Drain to Source Breakdown Voltage:60V
- Pulsed Drain Current-Max (IDM):144A
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj):175°C
- FET Feature:Standard
- Height:1mm
- RoHS Status:ROHS3 Compliant
在庫數 22721
- 1+: $0.35354
- 10+: $0.33353
- 100+: $0.31465
- 500+: $0.29684
- 1000+: $0.28004
小計金額 $0.35354











