MMDF2C03HDR2

ON Semiconductor
Transistors - FETs, MOSFETs - Arrays
8-SOIC (0.154, 3.90mm Width)
MOSFET N/P-CH 30V 4.1A/3A 8SOIC
Date Sheet

在庫數 89

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：4.1A 3A
Number of Elements：2
Turn Off Delay Time：81 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2006
JESD-609 Code：e0
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
Terminal Finish：Tin/Lead (Sn/Pb)
Voltage - Rated DC：30V
Max Power Dissipation：2W
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：240
Reach Compliance Code：not_compliant
Current Rating：4.1A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：MMDF2C03HD
Pin Count：8
Qualification Status：Not Qualified
Configuration：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
FET Type：N and P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：70m Ω @ 3A, 10V
Vgs(th) (Max) @ Id：3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：630pF @ 24V
Gate Charge (Qg) (Max) @ Vgs：16nC @ 10V
Rise Time：18ns
Polarity/Channel Type：N-CHANNEL AND P-CHANNEL
Fall Time (Typ)：194 ns
Continuous Drain Current (ID)：3A
Gate to Source Voltage (Vgs)：20V
Drain-source On Resistance-Max：0.07Ohm
Drain to Source Breakdown Voltage：30V
Pulsed Drain Current-Max (IDM)：21A
Avalanche Energy Rating (Eas)：324 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
FET Feature：Logic Level Gate
RoHS Status：Non-RoHS Compliant
Lead Free：Contains Lead

在庫數 89

小計金額 $0.00000

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MMDF2C03HDR2