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FQPF9P25
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- MOSFET P-CH 250V 6A TO-220F
Date Sheet
在庫數 2
- 1+： $1.78973
- 10+： $1.68842
- 100+： $1.59285
- 500+： $1.50269
- 1000+： $1.41763
小計金額 $1.78973
仕様 よくある質問
- Factory Lead Time：4 Weeks
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Surface Mount：NO
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：6A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：50W Tc
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：5V @ 250μA
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：QFET®
- Published：2013
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- HTS Code：8541.29.00.95
- Terminal Position：SINGLE
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- JESD-30 Code：R-PSFM-T3
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Case Connection：ISOLATED
- FET Type：P-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：620m Ω @ 3A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：1180pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：38nC @ 10V
- Drain to Source Voltage (Vdss)：250V
- Vgs (Max)：±30V
- Drain Current-Max (Abs) (ID)：6A
- Drain-source On Resistance-Max：0.62Ohm
- Pulsed Drain Current-Max (IDM)：24A
- DS Breakdown Voltage-Min：250V
- Avalanche Energy Rating (Eas)：650 mJ
- REACH SVHC：not_compliant
- RoHS Status：ROHS3 Compliant
在庫數 2
- 1+： $1.78973
- 10+： $1.68842
- 100+： $1.59285
- 500+： $1.50269
- 1000+： $1.41763
小計金額 $1.78973
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