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STD100N10LF7AG
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STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 100V 80A DPAK
Date Sheet
在庫數 65252
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：ACTIVE (Last Updated: 8 months ago)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Surface Mount：YES
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：80A Tc
- Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
- Number of Elements：1
- Power Dissipation (Max)：125W Tc
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tape & Reel (TR)
- Series：Automotive, AEC-Q101, STripFET™ F7
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- Terminal Position：SINGLE
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- Base Part Number：STD10
- JESD-30 Code：R-PSSO-G2
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Case Connection：DRAIN
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：9m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：4000pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：73nC @ 10V
- Drain to Source Voltage (Vdss)：100V
- Vgs (Max)：±20V
- Drain Current-Max (Abs) (ID)：80A
- Drain-source On Resistance-Max：0.011Ohm
- Pulsed Drain Current-Max (IDM)：320A
- DS Breakdown Voltage-Min：100V
- Avalanche Energy Rating (Eas)：200 mJ
- RoHS Status：ROHS3 Compliant
在庫數 65252
小計金額 $0.00000
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