STS2DPFS20V

STMicroelectronics
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET P-CH 20V 2.5A 8-SOIC
Date Sheet

在庫數 130

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：2.5A Tc
Drive Voltage (Max Rds On, Min Rds On)：2.7V 4.5V
Number of Elements：1
Power Dissipation (Max)：2W Tc
Turn Off Delay Time：45 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：600mV @ 250μA
Operating Temperature：150°C TJ
Packaging：Cut Tape (CT)
Series：STripFET™ II
JESD-609 Code：e4
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：-20V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-2.5A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STS2D
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2W
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：200m Ω @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds：315pF @ 15V
Gate Charge (Qg) (Max) @ Vgs：4.7nC @ 4.5V
Rise Time：30ns
Drain to Source Voltage (Vdss)：20V
Vgs (Max)：±12V
Fall Time (Typ)：11 ns
Continuous Drain Current (ID)：2.5A
Gate to Source Voltage (Vgs)：12V
Drain Current-Max (Abs) (ID)：2A
Drain-source On Resistance-Max：0.25Ohm
Drain to Source Breakdown Voltage：-20V
Pulsed Drain Current-Max (IDM)：10A
FET Feature：Schottky Diode (Isolated)
RoHS Status：ROHS3 Compliant

在庫數 130

小計金額 $0.00000

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STS2DPFS20V