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IRFIZ24E
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Infineon Technologies
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Transistors - FETs, MOSFETs - Single
- TO-220-3 Full Pack
- MOSFET N-CH 60V 14A TO220FP
Date Sheet
在庫數 3300
小計金額 $0.00000
仕様 よくある質問
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Surface Mount：NO
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：14A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：29W Tc
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tube
- Series：HEXFET®
- Published：1997
- JESD-609 Code：e3
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn) - with Nickel (Ni) barrier
- Additional Feature：HIGH RELIABILITY
- Terminal Position：SINGLE
- Peak Reflow Temperature (Cel)：NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
- JESD-30 Code：R-PSFM-T3
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Case Connection：ISOLATED
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：71m Ω @ 7.8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：370pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Drain to Source Voltage (Vdss)：60V
- Vgs (Max)：±20V
- Drain Current-Max (Abs) (ID)：14A
- Drain-source On Resistance-Max：0.071Ohm
- Pulsed Drain Current-Max (IDM)：68A
- DS Breakdown Voltage-Min：60V
- Avalanche Energy Rating (Eas)：71 mJ
- RoHS Status：Non-RoHS Compliant
在庫數 3300
小計金額 $0.00000
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