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STD2NM60T4
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- MOSFET N-CH 600V 2A DPAK
Date Sheet
在庫數 235
小計金額 $0.00000
仕様 よくある質問
- Mount：Surface Mount
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：2A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：46W Tc
- Operating Temperature：150°C TJ
- Packaging：Tape & Reel (TR)
- Series：MDmesh™
- JESD-609 Code：e3
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn)
- Voltage - Rated DC：600V
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Reach Compliance Code：not_compliant
- Current Rating：2A
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：STD2N
- Pin Count：3
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：46W
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：3.2 Ω @ 1A, 10V
- Vgs(th) (Max) @ Id：5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：160pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：8.4nC @ 10V
- Rise Time：8ns
- Vgs (Max)：±30V
- Fall Time (Typ)：25 ns
- Continuous Drain Current (ID)：2A
- Gate to Source Voltage (Vgs)：30V
- Drain Current-Max (Abs) (ID)：2A
- Drain to Source Breakdown Voltage：600V
- Pulsed Drain Current-Max (IDM)：8A
- Avalanche Energy Rating (Eas)：250 mJ
- RoHS Status：ROHS3 Compliant
- Lead Free：Lead Free
在庫數 235
小計金額 $0.00000
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