STS4DPFS30L

STMicroelectronics
Transistors - FETs, MOSFETs - Single
8-SOIC (0.154, 3.90mm Width)
MOSFET P-Ch 30 Volt 5 Amp
Date Sheet

在庫數 703

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154, 3.90mm Width)
Number of Pins：8
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：5A Tc
Power Dissipation (Max)：2.5W Tc
Turn Off Delay Time：125 ns
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：2.5V @ 250μA
Drive Voltage (Max Rds On, Min Rds On)：4.5V 10V
Number of Elements：1
Series：STripFET™
Operating Temperature：150°C TJ
Packaging：Tape & Reel (TR)
JESD-609 Code：e4
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：8
ECCN Code：EAR99
Terminal Finish：Nickel/Palladium/Gold (Ni/Pd/Au)
Voltage - Rated DC：-30V
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：-5A
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STS4D
Qualification Status：Not Qualified
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：2.5W
Turn On Delay Time：25 ns
FET Type：P-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：55m Ω @ 2.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds：1350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs：16nC @ 5V
Rise Time：35ns
Drain to Source Voltage (Vdss)：30V
Vgs (Max)：±16V
Fall Time (Typ)：35 ns
Continuous Drain Current (ID)：5A
Gate to Source Voltage (Vgs)：16V
Drain Current-Max (Abs) (ID)：4A
Drain-source On Resistance-Max：0.095Ohm
Drain to Source Breakdown Voltage：-30V
FET Feature：Schottky Diode (Isolated)
RoHS Status：ROHS3 Compliant
Lead Free：Contains Lead

在庫數 703

小計金額 $0.00000

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STS4DPFS30L