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STD5N20T4
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Trans MOSFET N-CH 200V 5A 3-Pin(2 Tab) DPAK T/R
Date Sheet
在庫數 23232
小計金額 $0.00000
仕様 よくある質問
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
- Number of Pins:3
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:5A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):45W Tc
- Operating Temperature:150°C TJ
- Packaging:Tape & Reel (TR)
- Series:MESH OVERLAY™
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- Termination:SMD/SMT
- ECCN Code:EAR99
- Resistance:800mOhm
- Terminal Finish:Matte Tin (Sn)
- Voltage - Rated DC:200V
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:5A
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:STD5N
- Pin Count:3
- JESD-30 Code:R-PSSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:45W
- Case Connection:DRAIN
- Turn On Delay Time:18 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:800m Ω @ 2.5A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:350pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
- Rise Time:30ns
- Vgs (Max):±20V
- Fall Time (Typ):10 ns
- Continuous Drain Current (ID):5A
- Threshold Voltage:3V
- JEDEC-95 Code:TO-252AA
- Gate to Source Voltage (Vgs):20V
- Drain Current-Max (Abs) (ID):5A
- Drain to Source Breakdown Voltage:200V
- Pulsed Drain Current-Max (IDM):20A
- Dual Supply Voltage:200V
- Nominal Vgs:3 V
- Height:2.4mm
- Length:6.6mm
- Width:6.2mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 23232
小計金額 $0.00000











