STD8NM60N

STMicroelectronics
Transistors - FETs, MOSFETs - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET N-CH 600V 7A DPAK
Date Sheet

在庫數 23232

小計金額 $0.00000

仕様よくある質問

Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Current - Continuous Drain (Id) @ 25℃：7A Tc
Drive Voltage (Max Rds On, Min Rds On)：10V
Number of Elements：1
Power Dissipation (Max)：70W Tc
Turn Off Delay Time：40 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tape & Reel (TR)
Series：MDmesh™ II
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Obsolete
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Additional Feature：AVALANCHE RATED
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：30
Base Part Number：STD8N
Pin Count：3
JESD-30 Code：R-PSSO-G2
Qualification Status：Not Qualified
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Power Dissipation：70W
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：650m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：560pF @ 50V
Gate Charge (Qg) (Max) @ Vgs：19nC @ 10V
Rise Time：12ns
Vgs (Max)：±25V
Fall Time (Typ)：10 ns
Continuous Drain Current (ID)：7A
Gate to Source Voltage (Vgs)：25V
Drain Current-Max (Abs) (ID)：7A
Drain-source On Resistance-Max：0.65Ohm
Drain to Source Breakdown Voltage：600V
Pulsed Drain Current-Max (IDM)：28A
Avalanche Energy Rating (Eas)：200 mJ
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 23232

小計金額 $0.00000

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STD8NM60N