日本語
人気検索：
(0)
画像はあくまで参考です。
STD5NK50Z-1
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- STMICROELECTRONICS STD5NK50Z-1 MOSFET Transistor, N Channel, 2.2 A, 500 V, 1.22 ohm, 10 V, 3.75 V
Date Sheet
在庫數 13740
小計金額 $0.00000
仕様 よくある質問
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins：3
- Transistor Element Material：SILICON
- Power Dissipation (Max)：70W Tc
- Turn Off Delay Time：32 ns
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4.5V @ 50μA
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Current - Continuous Drain (Id) @ 25℃：4.4A Tc
- Packaging：Tube
- Series：SuperMESH™
- Operating Temperature：-55°C~150°C TJ
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel)：260
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：STD5N
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：70W
- Turn On Delay Time：15 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：1.5 Ω @ 2.2A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：535pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V
- Rise Time：10ns
- Vgs (Max)：±30V
- Fall Time (Typ)：15 ns
- Continuous Drain Current (ID)：2.2A
- Threshold Voltage：3.75V
- Gate to Source Voltage (Vgs)：30V
- Drain Current-Max (Abs) (ID)：4.4A
- Drain to Source Breakdown Voltage：500V
- Width：2.4mm
- Height：6.2mm
- Length：6.6mm
- REACH SVHC：No SVHC
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
在庫數 13740
小計金額 $0.00000
サポートセンター
購入サービス
プライバシーと規約
Kynix について
お問合せ
