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STD2NK70Z-1
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- MOSFET N-CH 700V 1.6A IPAK
Date Sheet
在庫數 479
小計金額 $0.00000
仕様 よくある質問
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：1.6A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：45W Tc
- Turn Off Delay Time：20 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：SuperMESH™
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Matte Tin (Sn) - annealed
- Additional Feature：AVALANCHE RATED
- Peak Reflow Temperature (Cel)：260
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：STD2N
- Pin Count：3
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：45W
- Turn On Delay Time：7 ns
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：7 Ω @ 800mA, 10V
- Vgs(th) (Max) @ Id：4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds：280pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs：11.4nC @ 10V
- Rise Time：17ns
- Vgs (Max)：±30V
- Fall Time (Typ)：35 ns
- Continuous Drain Current (ID)：1.6A
- Gate to Source Voltage (Vgs)：30V
- Drain-source On Resistance-Max：7Ohm
- Drain to Source Breakdown Voltage：700V
- Pulsed Drain Current-Max (IDM)：6.4A
- Avalanche Energy Rating (Eas)：110 mJ
- Radiation Hardening：No
- RoHS Status：ROHS3 Compliant
在庫數 479
小計金額 $0.00000
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