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STD6NM60N-1
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - Single
- TO-251-3 Short Leads, IPak, TO-251AA
- MOSFET N-CH 600V 4.6A IPAK
Date Sheet
在庫數 73200
小計金額 $0.00000
仕様 よくある質問
- Mount：Through Hole
- Mounting Type：Through Hole
- Package / Case：TO-251-3 Short Leads, IPak, TO-251AA
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：4.6A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：45W Tc
- Turn Off Delay Time：40 ns
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tube
- Series：MDmesh™ II
- JESD-609 Code：e3
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- Terminal Finish：Matte Tin (Sn)
- Peak Reflow Temperature (Cel)：260
- Reach Compliance Code：not_compliant
- Time@Peak Reflow Temperature-Max (s)：30
- Base Part Number：STD6N
- Pin Count：3
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：45W
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：920m Ω @ 2.3A, 10V
- Vgs(th) (Max) @ Id：4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds：420pF @ 50V
- Gate Charge (Qg) (Max) @ Vgs：13nC @ 10V
- Rise Time：8ns
- Vgs (Max)：±25V
- Fall Time (Typ)：9 ns
- Continuous Drain Current (ID)：4.6A
- Gate to Source Voltage (Vgs)：25V
- Drain-source On Resistance-Max：0.92Ohm
- Drain to Source Breakdown Voltage：600V
- Pulsed Drain Current-Max (IDM)：18.4A
- Avalanche Energy Rating (Eas)：65 mJ
- RoHS Status：ROHS3 Compliant
在庫數 73200
小計金額 $0.00000
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