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2N5795
-
Microchip
-
Transistors - Bipolar (BJT) - Arrays
- TO-78-6 Metal Can
- Bipolar Transistors - BJT BJTs
Date Sheet
在庫數 11
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:Production (Last Updated: 2 months ago)
- Contact Plating:Lead, Tin
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-78-6 Metal Can
- Surface Mount:NO
- Supplier Device Package:TO-78-6
- Number of Terminals:8
- Transistor Element Material:SILICON
- Factory Pack QuantityFactory Pack Quantity:1
- Manufacturer:Microchip
- Brand:Microchip Technology
- RoHS:N
- Package:Bulk
- Current-Collector (Ic) (Max):600mA
- Base Product Number:2N5795
- Mfr:Microchip Technology
- Product Status:Active
- Package Style:CYLINDRICAL
- Package Body Material:METAL
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:200 °C
- Rohs Code:No
- Transition Frequency-Nom (fT):200 MHz
- Manufacturer Part Number:2N5795
- Turn-on Time-Max (ton):50 ns
- Package Shape:ROUND
- Number of Elements:2
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROSEMI CORP
- Turn-off Time-Max (toff):140 ns
- Risk Rank:5.23
- Packaging:Bulk
- Operating Temperature:-65°C ~ 175°C (TJ)
- Series:-
- JESD-609 Code:e0
- Pbfree Code:No
- ECCN Code:EAR99
- Temperature Coefficient:600.0000 ppm/°C
- Resistance:10 mOhm
- Terminal Finish:TIN LEAD
- Max Operating Temperature:175 °C
- Min Operating Temperature:-65 °C
- Subcategory:Transistors
- Power Rating:2.0000 W
- Max Power Dissipation:600 mW
- Technology:Si
- Terminal Position:BOTTOM
- Terminal Form:WIRE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- JESD-30 Code:O-MBCY-W8
- Qualification Status:Not Qualified
- Configuration:SEPARATE, 2 ELEMENTS
- Power - Max:600mW
- Polarity/Channel Type:PNP
- Product Type:BJTs - Bipolar Transistors
- Transistor Type:2 PNP (Dual)
- Collector Emitter Voltage (VCEO):60 V
- Max Collector Current:600 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
- Current - Collector Cutoff (Max):10µA (ICBO)
- JEDEC-95 Code:TO-78
- Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max):60V
- Frequency - Transition:-
- Collector Base Voltage (VCBO):60 V
- Resistance Tolerance:1
- Collector Current-Max (IC):0.6 A
- DC Current Gain-Min (hFE):40
- Collector-Emitter Voltage-Max:60 V
- Product Category:Bipolar Transistors - BJT
- Product Length:6.35
- Product Width:3.15
在庫數 11
小計金額 $0.00000











