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2N5795

在庫數 11

小計金額 $0.00000

仕様 よくある質問
  • Lifecycle Status:Production (Last Updated: 2 months ago)
  • Contact Plating:Lead, Tin
  • Mount:Through Hole
  • Mounting Type:Through Hole
  • Package / Case:TO-78-6 Metal Can
  • Surface Mount:NO
  • Supplier Device Package:TO-78-6
  • Number of Terminals:8
  • Transistor Element Material:SILICON
  • Factory Pack QuantityFactory Pack Quantity:1
  • Manufacturer:Microchip
  • Brand:Microchip Technology
  • RoHS:N
  • Package:Bulk
  • Current-Collector (Ic) (Max):600mA
  • Base Product Number:2N5795
  • Mfr:Microchip Technology
  • Product Status:Active
  • Package Style:CYLINDRICAL
  • Package Body Material:METAL
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Operating Temperature-Max:200 °C
  • Rohs Code:No
  • Transition Frequency-Nom (fT):200 MHz
  • Manufacturer Part Number:2N5795
  • Turn-on Time-Max (ton):50 ns
  • Package Shape:ROUND
  • Number of Elements:2
  • Part Life Cycle Code:Active
  • Ihs Manufacturer:MICROSEMI CORP
  • Turn-off Time-Max (toff):140 ns
  • Risk Rank:5.23
  • Packaging:Bulk
  • Operating Temperature:-65°C ~ 175°C (TJ)
  • Series:-
  • JESD-609 Code:e0
  • Pbfree Code:No
  • ECCN Code:EAR99
  • Temperature Coefficient:600.0000 ppm/°C
  • Resistance:10 mOhm
  • Terminal Finish:TIN LEAD
  • Max Operating Temperature:175 °C
  • Min Operating Temperature:-65 °C
  • Subcategory:Transistors
  • Power Rating:2.0000 W
  • Max Power Dissipation:600 mW
  • Technology:Si
  • Terminal Position:BOTTOM
  • Terminal Form:WIRE
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:unknown
  • JESD-30 Code:O-MBCY-W8
  • Qualification Status:Not Qualified
  • Configuration:SEPARATE, 2 ELEMENTS
  • Power - Max:600mW
  • Polarity/Channel Type:PNP
  • Product Type:BJTs - Bipolar Transistors
  • Transistor Type:2 PNP (Dual)
  • Collector Emitter Voltage (VCEO):60 V
  • Max Collector Current:600 mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 10V
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • JEDEC-95 Code:TO-78
  • Vce Saturation (Max) @ Ib, Ic:1.6V @ 50mA, 500mA
  • Voltage - Collector Emitter Breakdown (Max):60V
  • Frequency - Transition:-
  • Collector Base Voltage (VCBO):60 V
  • Resistance Tolerance:1
  • Collector Current-Max (IC):0.6 A
  • DC Current Gain-Min (hFE):40
  • Collector-Emitter Voltage-Max:60 V
  • Product Category:Bipolar Transistors - BJT
  • Product Length:6.35
  • Product Width:3.15

在庫數 11

小計金額 $0.00000