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2N5116UB
-
Microchip
-
Transistors - JFETs
- 3-SMD, No Lead
- Transistor JFET P-CH 30V 4-Pin UB
Date Sheet
在庫數 38
小計金額 $0.00000
仕様 よくある質問
- Mounting Type:Surface Mount
- Package / Case:3-SMD, No Lead
- Surface Mount:YES
- Supplier Device Package:UB
- Number of Terminals:3
- Transistor Element Material:SILICON
- Package:Bulk
- Mfr:Microchip Technology
- Product Status:Discontinued at Digi-Key
- Package Description:SURFACE MOUNT PACKAGE-3
- Package Style:SMALL OUTLINE
- Package Body Material:CERAMIC, METAL-SEALED COFIRED
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:200 °C
- Rohs Code:No
- Manufacturer Part Number:2N5116UB
- Package Shape:RECTANGULAR
- Manufacturer:Microsemi Corporation
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROSEMI CORP
- Risk Rank:1.63
- Operating Temperature:-65°C ~ 200°C (TJ)
- Series:Military, MIL-PRF-19500
- JESD-609 Code:e0
- Pbfree Code:No
- ECCN Code:EAR99
- Terminal Finish:TIN LEAD
- HTS Code:8541.21.00.95
- Subcategory:FET General Purpose Small Signal
- Terminal Position:DUAL
- Terminal Form:NO LEAD
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- Pin Count:3
- JESD-30 Code:R-CDSO-N3
- Qualification Status:Not Qualified
- Configuration:SINGLE
- Operating Mode:DEPLETION MODE
- Power - Max:500 mW
- FET Type:P-Channel
- Input Capacitance (Ciss) (Max) @ Vds:27pF @ 15V
- Drain to Source Voltage (Vdss):30 V
- Polarity/Channel Type:P-CHANNEL
- Drain-source On Resistance-Max:175 Ω
- DS Breakdown Voltage-Min:30 V
- FET Technology:JUNCTION
- Power Dissipation-Max (Abs):0.5 W
- Feedback Cap-Max (Crss):7 pF
- Current - Drain (Idss) @ Vds (Vgs=0):25 mA @ 15 V
- Voltage - Cutoff (VGS off) @ Id:4 V @ 1 nA
- Voltage - Breakdown (V(BR)GSS):30 V
- Resistance - RDS(On):175 Ohms
在庫數 38
小計金額 $0.00000











