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STE180NE10
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STMicroelectronics
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Transistors - FETs, MOSFETs - Single
- ISOTOP
- MOSFET N-CH 100V 180A ISOTOP
Date Sheet
在庫數 12989
小計金額 $0.00000
仕様 よくある質問
- Mount:Chassis Mount, Screw
- Mounting Type:Chassis Mount
- Package / Case:ISOTOP
- Number of Pins:4
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:180A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):360W Tc
- Turn Off Delay Time:430 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:STripFET™
- Part Status:Obsolete
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:4
- ECCN Code:EAR99
- Terminal Finish:Nickel (Ni)
- Additional Feature:AVALANCHE RATED
- Voltage - Rated DC:100V
- Terminal Position:UPPER
- Terminal Form:UNSPECIFIED
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- Current Rating:180A
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Base Part Number:STE1
- Pin Count:4
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:360W
- Case Connection:ISOLATED
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:6 Ω @ 40A, 10V
- Vgs(th) (Max) @ Id:4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:21000pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:795nC @ 10V
- Rise Time:600ns
- Vgs (Max):±20V
- Fall Time (Typ):440 ns
- Continuous Drain Current (ID):180A
- Threshold Voltage:3V
- Gate to Source Voltage (Vgs):20V
- Drain-source On Resistance-Max:6Ohm
- Drain to Source Breakdown Voltage:100V
- Pulsed Drain Current-Max (IDM):360A
- Avalanche Energy Rating (Eas):720 mJ
- Isolation Voltage:2.5kV
- Nominal Vgs:3 V
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 12989
小計金額 $0.00000











