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BS170RLRPG
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- MOSFET N-CH 60V 500MA TO-92
Date Sheet
在庫數 410
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status：OBSOLETE (Last Updated: 3 days ago)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface Mount：NO
- Number of Pins：3
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：500mA Ta
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：350mW Ta
- Operating Temperature：-55°C~150°C TJ
- Packaging：Tape & Box (TB)
- Published：2005
- JESD-609 Code：e1
- Pbfree Code：yes
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin/Silver/Copper (Sn/Ag/Cu)
- HTS Code：8541.21.00.95
- Voltage - Rated DC：60V
- Terminal Position：BOTTOM
- Peak Reflow Temperature (Cel)：260
- Current Rating：500mA
- Time@Peak Reflow Temperature-Max (s)：40
- Pin Count：3
- Qualification Status：Not Qualified
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：350mW
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：5 Ω @ 200mA, 10V
- Vgs(th) (Max) @ Id：3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds：60pF @ 10V
- Vgs (Max)：±20V
- Continuous Drain Current (ID)：500mA
- Gate to Source Voltage (Vgs)：20V
- Drain Current-Max (Abs) (ID)：0.5A
- Drain-source On Resistance-Max：5Ohm
- Drain to Source Breakdown Voltage：60V
- RoHS Status：RoHS Compliant
- Lead Free：Lead Free
在庫數 410
小計金額 $0.00000
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