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FDB8132
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- MOSFET N-CH 30V 80A D2PAK
Date Sheet
在庫數 0
小計金額 $0.00000
仕様 よくある質問
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Surface Mount：YES
- Transistor Element Material：SILICON
- Current - Continuous Drain (Id) @ 25℃：80A Tc
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Number of Elements：1
- Power Dissipation (Max)：341W Tc
- Voltage - Gate Threshold (Vgs(th)) (Max) @ Id：4V @ 250μA
- Operating Temperature：-55°C~175°C TJ
- Packaging：Tape & Reel (TR)
- Series：PowerTrench®
- JESD-609 Code：e3
- Part Status：Obsolete
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：2
- ECCN Code：EAR99
- Terminal Finish：MATTE TIN
- Terminal Position：SINGLE
- Terminal Form：GULL WING
- Peak Reflow Temperature (Cel)：260
- Time@Peak Reflow Temperature-Max (s)：30
- JESD-30 Code：R-PSSO-G2
- Qualification Status：Not Qualified
- Configuration：SINGLE WITH BUILT-IN DIODE
- Operating Mode：ENHANCEMENT MODE
- Case Connection：DRAIN
- FET Type：N-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：1.6m Ω @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds：14100pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs：350nC @ 13V
- Drain to Source Voltage (Vdss)：30V
- Vgs (Max)：±20V
- Drain Current-Max (Abs) (ID)：80A
- Drain-source On Resistance-Max：0.0016Ohm
- DS Breakdown Voltage-Min：30V
- Avalanche Energy Rating (Eas)：1904 mJ
- REACH SVHC：compliant
- RoHS Status：RoHS Compliant
在庫數 0
小計金額 $0.00000
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