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FCP4N60
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- TO-220-3
- MOSFET N-CH 600V 3.9A TO-220
Date Sheet
在庫數 86000
- 1+: $2.00418
- 10+: $1.89073
- 100+: $1.78371
- 500+: $1.68274
- 1000+: $1.58750
小計金額 $2.00418
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:12 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-220-3
- Number of Pins:3
- Weight:1.8g
- Transistor Element Material:SILICON
- Current - Continuous Drain (Id) @ 25℃:3.9A Tc
- Drive Voltage (Max Rds On, Min Rds On):10V
- Number of Elements:1
- Power Dissipation (Max):50W Tc
- Turn Off Delay Time:36 ns
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tube
- Series:SuperFET™
- Published:2004
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- Termination:Through Hole
- ECCN Code:EAR99
- Resistance:1.2Ohm
- Terminal Finish:Tin (Sn)
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- Qualification Status:Not Qualified
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:50mW
- Turn On Delay Time:16 ns
- FET Type:N-Channel
- Transistor Application:SWITCHING
- Rds On (Max) @ Id, Vgs:1.2 Ω @ 2A, 10V
- Vgs(th) (Max) @ Id:5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds:540pF @ 25V
- Gate Charge (Qg) (Max) @ Vgs:16.6nC @ 10V
- Rise Time:45ns
- Vgs (Max):±30V
- Fall Time (Typ):30 ns
- Continuous Drain Current (ID):3.9A
- Threshold Voltage:5V
- JEDEC-95 Code:TO-220AB
- Gate to Source Voltage (Vgs):30V
- Drain to Source Breakdown Voltage:600V
- Dual Supply Voltage:600V
- Nominal Vgs:5 V
- Height:16.51mm
- Length:10.67mm
- Width:4.83mm
- REACH SVHC:No SVHC
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 86000
- 1+: $2.00418
- 10+: $1.89073
- 100+: $1.78371
- 500+: $1.68274
- 1000+: $1.58750
小計金額 $2.00418
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