FCH043N60

ON Semiconductor
Transistors - FETs, MOSFETs - Single
TO-247-3
MOSFET HV SuperJunction MOS
Date Sheet

在庫數 9000

小計金額 $0.00000

仕様よくある質問

Factory Lead Time：12 Weeks
Lifecycle Status：ACTIVE (Last Updated: 5 days ago)
Package / Case：TO-247-3
Mounting Type：Through Hole
Mount：Through Hole
Number of Pins：3
Weight：6.39g
Transistor Element Material：SILICON
Turn Off Delay Time：162 ns
Power Dissipation (Max)：592W Tc
Number of Elements：1
Drive Voltage (Max Rds On, Min Rds On)：10V
Current - Continuous Drain (Id) @ 25℃：75A Tc
Published：2014
Series：SuperFET® II
Packaging：Tube
Operating Temperature：-55°C~150°C TJ
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Tin (Sn)
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Time@Peak Reflow Temperature-Max (s)：NOT SPECIFIED
Number of Channels：1
Element Configuration：Single
Operating Mode：ENHANCEMENT MODE
Turn On Delay Time：46 ns
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：43m Ω @ 38A, 10V
Vgs(th) (Max) @ Id：3.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：12225pF @ 400V
Gate Charge (Qg) (Max) @ Vgs：215nC @ 10V
Rise Time：36ns
Drain to Source Voltage (Vdss)：600V
Vgs (Max)：±20V
Fall Time (Typ)：6 ns
Continuous Drain Current (ID)：75A
JEDEC-95 Code：TO-247AB
Gate to Source Voltage (Vgs)：20V
Pulsed Drain Current-Max (IDM)：225A
DS Breakdown Voltage-Min：600V
Avalanche Energy Rating (Eas)：2025 mJ
Width：4.82mm
Length：15.87mm
Height：20.82mm
RoHS Status：ROHS3 Compliant

在庫數 9000

小計金額 $0.00000

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FCH043N60