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BUZ11A
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STMicroelectronics
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Transistors - FETs, MOSFETs - Single
- 26A, 50V, 0.055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Date Sheet
在庫數 500
小計金額 $0.00000
仕様 よくある質問
- Surface Mount:NO
- Number of Terminals:3
- Transistor Element Material:SILICON
- Package Description:TO-220, 3 PIN
- Package Style:FLANGE MOUNT
- Package Body Material:PLASTIC/EPOXY
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:175 °C
- Rohs Code:Yes
- Manufacturer Part Number:BUZ11A
- Turn-on Time-Max (ton):175 ns
- Package Shape:RECTANGULAR
- Manufacturer:STMicroelectronics
- Number of Elements:1
- Part Life Cycle Code:Obsolete
- Ihs Manufacturer:STMICROELECTRONICS
- Turn-off Time-Max (toff):450 ns
- Risk Rank:7.56
- Part Package Code:TO-220AB
- Drain Current-Max (ID):26 A
- JESD-609 Code:e3
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn)
- Subcategory:FET General Purpose Power
- Terminal Position:SINGLE
- Terminal Form:THROUGH-HOLE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:not_compliant
- Pin Count:3
- JESD-30 Code:R-PSFM-T3
- Qualification Status:Not Qualified
- Configuration:SINGLE WITH BUILT-IN DIODE
- Operating Mode:ENHANCEMENT MODE
- Transistor Application:SWITCHING
- Polarity/Channel Type:N-CHANNEL
- JEDEC-95 Code:TO-220AB
- Drain Current-Max (Abs) (ID):25 A
- Drain-source On Resistance-Max:0.055 Ω
- Pulsed Drain Current-Max (IDM):104 A
- DS Breakdown Voltage-Min:50 V
- Avalanche Energy Rating (Eas):120 mJ
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs):75 W
- Feedback Cap-Max (Crss):200 pF
- Power Dissipation Ambient-Max:95 W
在庫數 500
小計金額 $0.00000











