BD237

在庫數 0

小計金額 $0.00000

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Lifecycle Status：Obsolete (Last Updated: 2 years ago)
Factory Lead Time：8 Weeks
Surface Mount：NO
Number of Pins：3
Number of Terminals：3
Transistor Element Material：SILICON
Collector-Emitter Saturation Voltage：600 mV
hFEMin：40
Manufacturer Lifecycle Status：OBSOLETE (Last Updated: 2 years ago)
RoHS：Compliant
Package Description：ROHS COMPLIANT PACKAGE-3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：150 °C
Transition Frequency-Nom (fT)：3 MHz
Manufacturer Part Number：BD237
Package Shape：RECTANGULAR
Manufacturer：STMicroelectronics
Number of Elements：1
Part Life Cycle Code：Active
Samacsys Description：BD237, NPN Bipolar Transistor, 2 A 80 V HFE:25 3 MHz Power, 3-Pin SOT-32
Ihs Manufacturer：STMICROELECTRONICS
Risk Rank：0.73
Part Package Code：SIP
JESD-609 Code：e3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Max Operating Temperature：150 °C
Min Operating Temperature：-55 °C
Subcategory：Other Transistors
Max Power Dissipation：25 W
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：not_compliant
Current Rating：2 A
Pin Count：3
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Brand Name：STMicroelectronics
Polarity：NPN
Configuration：SINGLE
Element Configuration：Single
Case Connection：ISOLATED
Transistor Application：SWITCHING
Gain Bandwidth Product：3 MHz
Polarity/Channel Type：NPN
Collector Emitter Voltage (VCEO)：80 V
Max Collector Current：2 A
JEDEC-95 Code：TO-126
Collector Base Voltage (VCBO)：100 V
Power Dissipation-Max (Abs)：25 W
Emitter Base Voltage (VEBO)：5 V
Collector Current-Max (IC)：2 A
DC Current Gain-Min (hFE)：25
Collector-Emitter Voltage-Max：80 V
VCEsat-Max：0.6 V
Power Dissipation Ambient-Max：25 W

在庫數 0

小計金額 $0.00000

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BD237