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MCH3377-TL-E
-
ON Semiconductor
-
Transistors - FETs, MOSFETs - Single
- SC-70, SOT-323
- Single P-Channel Power MOSFET -20V, -3A, 83mΩ, SC 70FL / MCPH3, 3000-REEL
Date Sheet
在庫數 271039
小計金額 $0.00000
仕様 よくある質問
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Surface Mount：YES
- Number of Pins：3
- Supplier Device Package：3-MCPH
- Number of Terminals：3
- Transistor Element Material：SILICON
- RoHS：Compliant
- Turn Off Delay Time：42 ns
- Package：Bulk
- Current - Continuous Drain (Id) @ 25℃：3A (Ta)
- Mfr：onsemi
- Product Status：Active
- Package Description：LEAD FREE, MCPH3, SC-70, 3 PIN
- Package Style：SMALL OUTLINE
- Moisture Sensitivity Levels：1
- Package Body Material：PLASTIC/EPOXY
- Manufacturer Package Code：419AQ
- Operating Temperature-Max：150 °C
- Manufacturer Part Number：MCH3377-TL-E
- Package Shape：RECTANGULAR
- Manufacturer：ON Semiconductor
- Number of Elements：1
- Part Life Cycle Code：Lifetime Buy
- Ihs Manufacturer：ON SEMICONDUCTOR
- Risk Rank：5.12
- Drain Current-Max (ID)：3 A
- Packaging：Cut Tape (CT)
- Series：-
- JESD-609 Code：e6
- Pbfree Code：Yes
- ECCN Code：EAR99
- Resistance：83 mΩ
- Terminal Finish：Tin/Bismuth (Sn/Bi)
- Max Operating Temperature：150 °C
- Min Operating Temperature：-55 °C
- Subcategory：Other Transistors
- Max Power Dissipation：1 W
- Technology：MOSFET (Metal Oxide)
- Terminal Position：DUAL
- Terminal Form：FLAT
- Reach Compliance Code：not_compliant
- Pin Count：3
- JESD-30 Code：R-PDSO-F3
- Brand Name：ON Semiconductor
- Configuration：SINGLE WITH BUILT-IN DIODE
- Element Configuration：Single
- Operating Mode：ENHANCEMENT MODE
- Power Dissipation：1 W
- Turn On Delay Time：8.1 ns
- FET Type：P-Channel
- Transistor Application：SWITCHING
- Rds On (Max) @ Id, Vgs：83mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：-
- Input Capacitance (Ciss) (Max) @ Vds：375 pF @ 10 V
- Gate Charge (Qg) (Max) @ Vgs：4.6 nC @ 4.5 V
- Rise Time：26 ns
- Drain to Source Voltage (Vdss)：-20 V
- Polarity/Channel Type：P-CHANNEL
- Continuous Drain Current (ID)：3 A
- Gate to Source Voltage (Vgs)：10 V
- Drain Current-Max (Abs) (ID)：3 A
- Drain-source On Resistance-Max：0.083 Ω
- Drain to Source Breakdown Voltage：20 V
- Input Capacitance：375 pF
- DS Breakdown Voltage-Min：20 V
- FET Technology：METAL-OXIDE SEMICONDUCTOR
- Power Dissipation-Max (Abs)：1 W
- FET Feature：-
- Drain to Source Resistance：83 mΩ
- Rds On Max：83 mΩ
- Width：1.6 mm
- Height：850 µm
- Length：2 mm
- Radiation Hardening：No
- Lead Free：Lead Free
在庫數 271039
小計金額 $0.00000
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