NTE67

NTE Electronics, Inc
Transistors - FETs, MOSFETs - Single
TO-220-3
MOSFET N-CHANNEL 400V 4.5A TO220
Date Sheet

在庫數 33

小計金額 $0.00000

仕様よくある質問

Mounting Type：Through Hole
Package / Case：TO-220-3
Surface Mount：NO
Supplier Device Package：TO-220
Number of Terminals：3
Transistor Element Material：SILICON
Mfr：NTE Electronics, Inc
Package：Bag
Product Status：Active
Current - Continuous Drain (Id) @ 25℃：4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Power Dissipation (Max)：75W (Tc)
Manufacturer Part Number：NTE67
Manufacturer：NTE Electronics
Continuous Drain Current：4.5(A)
Drain-Source On-Volt：400(V)
Operating Temperature Classification：Military
Package Type：TO-220
Operating Temp Range：-55C to 150C
Gate-Source Voltage (Max)：±20(V)
Channel Mode：Enhancement
Number of Elements：1
Rad Hardened：No
Mounting：Through Hole
Package Description：FLANGE MOUNT, R-PSFM-T3
Package Style：FLANGE MOUNT
Package Body Material：PLASTIC/EPOXY
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：Yes
Package Shape：RECTANGULAR
Part Life Cycle Code：Active
Ihs Manufacturer：NTE ELECTRONICS INC
Turn-off Time-Max (toff)：90 ns
Risk Rank：1.59
Part Package Code：TO-220AB
Drain Current-Max (ID)：4.5 A
Series：-
Operating Temperature：-55°C ~ 150°C (TJ)
ECCN Code：EAR99
Type：Power MOSFET
Additional Feature：HIGH RELIABILITY
HTS Code：8541.29.00.95
Subcategory：FET General Purpose Power
Terminal Position：SINGLE
Terminal Form：THROUGH-HOLE
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：unknown
Pin Count：3 +Tab
JESD-30 Code：R-PSFM-T3
Qualification Status：Not Qualified
Polarity：N
Configuration：SINGLE WITH BUILT-IN DIODE
Operating Mode：ENHANCEMENT MODE
Power Dissipation：75(W)
Case Connection：DRAIN
FET Type：N-Channel
Transistor Application：SWITCHING
Rds On (Max) @ Id, Vgs：1.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id：4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds：780 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Drain to Source Voltage (Vdss)：400 V
Vgs (Max)：±20V
Polarity/Channel Type：N-CHANNEL
JEDEC-95 Code：TO-220AB
Drain Current-Max (Abs) (ID)：5.5 A
Drain-source On Resistance-Max：1.5 Ω
Pulsed Drain Current-Max (IDM)：18 A
DS Breakdown Voltage-Min：400 V
Avalanche Energy Rating (Eas)：290 mJ
FET Technology：METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)：75 W
FET Feature：-
Power Dissipation Ambient-Max：75 W

在庫數 33

小計金額 $0.00000

Phone

NTE67