2N5610

在庫數 20

小計金額 $0.00000

仕様よくある質問

Mounting Type：Through Hole
Package / Case：TO-213AA, TO-66-2
Surface Mount：NO
Supplier Device Package：TO-66 (TO-213AA)
Number of Terminals：2
Transistor Element Material：SILICON
Mfr：Microchip Technology
Package：Bulk
Product Status：Active
Current-Collector (Ic) (Max)：5 A
Transistor Polarity：NPN
Factory Pack QuantityFactory Pack Quantity：1
Manufacturer：Microchip
Brand：Microchip Technology / Atmel
Package Description：FLANGE MOUNT, O-MBFM-P2
Package Style：FLANGE MOUNT
Package Body Material：METAL
Operating Temperature-Max：150 °C
Transition Frequency-Nom (fT)：60 MHz
Manufacturer Part Number：2N5610
Package Shape：ROUND
Number of Elements：1
Part Life Cycle Code：Contact Manufacturer
Ihs Manufacturer：INCHANGE SEMICONDUCTOR CO LTD
Risk Rank：5.73
Series：-
Operating Temperature：-65°C ~ 200°C (TJ)
Subcategory：Transistors
Technology：Si
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Reach Compliance Code：unknown
JESD-30 Code：O-MBFM-P2
Configuration：SINGLE
Case Connection：COLLECTOR
Power - Max：25 W
Transistor Application：AMPLIFIER
Polarity/Channel Type：NPN
Product Type：BJTs - Bipolar Transistors
Transistor Type：PNP
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector Cutoff (Max)：-
JEDEC-95 Code：TO-66
Vce Saturation (Max) @ Ib, Ic：1.5V @ 500μA, 2.5mA
Voltage - Collector Emitter Breakdown (Max)：80 V
Frequency - Transition：-
Power Dissipation-Max (Abs)：25 W
Collector Current-Max (IC)：5 A
DC Current Gain-Min (hFE)：70
Collector-Emitter Voltage-Max：80 V
VCEsat-Max：1.5 V
Product Category：Bipolar Transistors - BJT

在庫數 20

小計金額 $0.00000

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2N5610