2N6378

Microchip Technology
Transistors - Bipolar (BJT) - Single
TO-3-2
Bipolar Transistors - BJT Power BJT
Date Sheet

在庫數 2837

小計金額 $0.00000

仕様よくある質問

Package / Case：TO-3-2
Mounting Type：Through Hole
Surface Mount：NO
Supplier Device Package：TO-3
Number of Terminals：2
Transistor Element Material：SILICON
RoHS：N
Factory Pack QuantityFactory Pack Quantity：1
DC Current Gain hFE Max：120
DC Collector/Base Gain hfe Min：30
Gain Bandwidth Product fT：-
Pd - Power Dissipation：250 W
Collector-Emitter Saturation Voltage：1.2 V
Emitter- Base Voltage VEBO：6 V
Collector- Emitter Voltage VCEO Max：100 V
Transistor Polarity：PNP
Mounting Styles：Through Hole
Package：Bulk
Current-Collector (Ic) (Max)：50 A
Mfr：Microchip Technology
Product Status：Active
Package Style：FLANGE MOUNT
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Rohs Code：No
Manufacturer Part Number：2N6378
Package Shape：ROUND
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：1.69
Part Package Code：TO-204AA
Packaging：Tray
Operating Temperature：-
Series：-
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：TIN LEAD
HTS Code：8541.29.00.95
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Pin Count：2
JESD-30 Code：O-MBFM-P2
Qualification Status：Not Qualified
Configuration：Single
Power - Max：250 W
Polarity/Channel Type：PNP
Transistor Type：PNP
DC Current Gain (hFE) (Min) @ Ic, Vce：-
Current - Collector Cutoff (Max)：-
JEDEC-95 Code：TO-3
Vce Saturation (Max) @ Ib, Ic：-
Voltage - Collector Emitter Breakdown (Max)：100 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：120 V
Collector Current-Max (IC)：50 A
DC Current Gain-Min (hFE)：30
Continuous Collector Current：- 50 A
Collector-Emitter Voltage-Max：100 V

在庫數 2837

小計金額 $0.00000

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2N6378