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2N3868S

在庫數 37

小計金額 $0.00000

仕様 よくある質問
  • Lifecycle Status:Production (Last Updated: 2 months ago)
  • Mounting Type:Through Hole
  • Mount:Through Hole
  • Surface Mount:NO
  • Number of Pins:3
  • Supplier Device Package:TO-39 (TO-205AD)
  • Number of Terminals:3
  • Transistor Element Material:SILICON
  • Package:Bulk
  • Current-Collector (Ic) (Max):3 mA
  • Base Product Number:2N3868
  • Mfr:Microchip Technology
  • Product Status:Active
  • RoHS:Compliant
  • Factory Pack QuantityFactory Pack Quantity:1
  • Manufacturer:Microchip
  • Brand:Microchip Technology
  • Package Description:TO-39, 3 PIN
  • Package Style:CYLINDRICAL
  • Package Body Material:METAL
  • Reflow Temperature-Max (s):NOT SPECIFIED
  • Operating Temperature-Max:200 °C
  • Rohs Code:No
  • Manufacturer Part Number:2N3868S
  • Package Shape:ROUND
  • Number of Elements:1
  • Part Life Cycle Code:Active
  • Ihs Manufacturer:MICROSEMI CORP
  • Risk Rank:5.11
  • Part Package Code:BCY
  • Turn-on Time-Max (ton):100 ns
  • Turn-off Time-Max (toff):600 ns
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Series:-
  • Packaging:Bulk
  • JESD-609 Code:e0
  • Pbfree Code:No
  • ECCN Code:EAR99
  • Terminal Finish:TIN LEAD
  • Max Operating Temperature:200 °C
  • Min Operating Temperature:-55 °C
  • HTS Code:8541.29.00.95
  • Subcategory:Transistors
  • Max Power Dissipation:1 W
  • Technology:Si
  • Terminal Position:BOTTOM
  • Terminal Form:WIRE
  • Peak Reflow Temperature (Cel):NOT SPECIFIED
  • Reach Compliance Code:unknown
  • Pin Count:2
  • JESD-30 Code:O-MBCY-W3
  • Qualification Status:Not Qualified
  • Configuration:SINGLE
  • Power - Max:1 W
  • Transistor Application:SWITCHING
  • Polarity/Channel Type:PNP
  • Product Type:BJTs - Bipolar Transistors
  • Transistor Type:PNP
  • Collector Emitter Voltage (VCEO):60 V
  • Max Collector Current:3 A
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 1.5A, 2V
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • JEDEC-95 Code:TO-205AD
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 2.5A
  • Voltage - Collector Emitter Breakdown (Max):60 V
  • Frequency - Transition:-
  • Collector Base Voltage (VCBO):60 V
  • Power Dissipation-Max (Abs):10 W
  • Collector Current-Max (IC):3 A
  • DC Current Gain-Min (hFE):20
  • Collector-Emitter Voltage-Max:60 V
  • Product Category:Bipolar Transistors - BJT
  • Radiation Hardening:No

在庫數 37

小計金額 $0.00000