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2N3868S
-
Microchip
-
Transistors - Bipolar (BJT) - Single
- Trans GP BJT PNP 60V 3A 3-Pin TO-39 Bag
Date Sheet
在庫數 37
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:Production (Last Updated: 2 months ago)
- Mounting Type:Through Hole
- Mount:Through Hole
- Surface Mount:NO
- Number of Pins:3
- Supplier Device Package:TO-39 (TO-205AD)
- Number of Terminals:3
- Transistor Element Material:SILICON
- Package:Bulk
- Current-Collector (Ic) (Max):3 mA
- Base Product Number:2N3868
- Mfr:Microchip Technology
- Product Status:Active
- RoHS:Compliant
- Factory Pack QuantityFactory Pack Quantity:1
- Manufacturer:Microchip
- Brand:Microchip Technology
- Package Description:TO-39, 3 PIN
- Package Style:CYLINDRICAL
- Package Body Material:METAL
- Reflow Temperature-Max (s):NOT SPECIFIED
- Operating Temperature-Max:200 °C
- Rohs Code:No
- Manufacturer Part Number:2N3868S
- Package Shape:ROUND
- Number of Elements:1
- Part Life Cycle Code:Active
- Ihs Manufacturer:MICROSEMI CORP
- Risk Rank:5.11
- Part Package Code:BCY
- Turn-on Time-Max (ton):100 ns
- Turn-off Time-Max (toff):600 ns
- Operating Temperature:-65°C ~ 200°C (TJ)
- Series:-
- Packaging:Bulk
- JESD-609 Code:e0
- Pbfree Code:No
- ECCN Code:EAR99
- Terminal Finish:TIN LEAD
- Max Operating Temperature:200 °C
- Min Operating Temperature:-55 °C
- HTS Code:8541.29.00.95
- Subcategory:Transistors
- Max Power Dissipation:1 W
- Technology:Si
- Terminal Position:BOTTOM
- Terminal Form:WIRE
- Peak Reflow Temperature (Cel):NOT SPECIFIED
- Reach Compliance Code:unknown
- Pin Count:2
- JESD-30 Code:O-MBCY-W3
- Qualification Status:Not Qualified
- Configuration:SINGLE
- Power - Max:1 W
- Transistor Application:SWITCHING
- Polarity/Channel Type:PNP
- Product Type:BJTs - Bipolar Transistors
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):60 V
- Max Collector Current:3 A
- DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 1.5A, 2V
- Current - Collector Cutoff (Max):100µA (ICBO)
- JEDEC-95 Code:TO-205AD
- Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 2.5A
- Voltage - Collector Emitter Breakdown (Max):60 V
- Frequency - Transition:-
- Collector Base Voltage (VCBO):60 V
- Power Dissipation-Max (Abs):10 W
- Collector Current-Max (IC):3 A
- DC Current Gain-Min (hFE):20
- Collector-Emitter Voltage-Max:60 V
- Product Category:Bipolar Transistors - BJT
- Radiation Hardening:No
在庫數 37
小計金額 $0.00000











