JANTX2N5667

Microchip
Transistors - Bipolar (BJT) - Single
TO-5-3
Trans GP BJT NPN 300V 5A 1200mW 3-Pin TO-5 Bag
Date Sheet

在庫數 112

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：Production (Last Updated: 2 months ago)
Contact Plating：Lead, Tin
Mount：Through Hole
Package / Case：TO-5-3
Mounting Type：Through Hole
Surface Mount：NO
Number of Pins：3
Supplier Device Package：TO-5
Number of Terminals：2
Transistor Element Material：SILICON
Qualification：MIL-PRF-55681/11
Transistor Polarity：NPN
Mounting：Through Hole
Rad Hardened：No
Number of Elements：1
Collector Current (DC)：5(A)
Operating Temp Range：-65C to 200C
Category：Bipolar Power
Collector-Base Voltage：400(V)
Package Type：TO-5
Emitter-Base Voltage：6(V)
Schedule B：8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080
Power Dissipation (Max)：1.2 W
RoHS：Compliant
Emitter- Base Voltage VEBO：6 V
Pd - Power Dissipation：1.2 W
Maximum Operating Temperature：+ 200 C
DC Collector/Base Gain hfe Min：25 at 1 A, 5 VDC
Collector-Emitter Saturation Voltage：400 mV
Minimum Operating Temperature：- 65 C
Factory Pack QuantityFactory Pack Quantity：1
Mounting Styles：SMD/SMT
Gain Bandwidth Product fT：-
Manufacturer：Microchip
Brand：Microchip / Microsemi
Maximum DC Collector Current：5 A
DC Current Gain hFE Max：75 at 1 A, 5 VDC
Collector- Emitter Voltage VCEO Max：300 V
Package：Bulk
Current-Collector (Ic) (Max)：5 A
Base Product Number：2N5667
Mfr：Microchip Technology
Product Status：Active
Package Description：FLANGE MOUNT, O-MBFM-P2
Package Style：FLANGE MOUNT
Package Body Material：METAL
Reflow Temperature-Max (s)：NOT SPECIFIED
Operating Temperature-Max：200 °C
Rohs Code：No
Manufacturer Part Number：JANTX2N5667
Package Shape：ROUND
Part Life Cycle Code：Active
Ihs Manufacturer：MICROSEMI CORP
Risk Rank：1.44
Part Package Code：TO-5
Packaging：Bag
Operating Temperature：-65°C ~ 200°C (TJ)
Series：Military, MIL-PRF-19500/455
JESD-609 Code：e0
Pbfree Code：No
ECCN Code：EAR99
Terminal Finish：Tin/Lead (Sn/Pb)
Max Operating Temperature：200 °C
Min Operating Temperature：-65 °C
HTS Code：8541.29.00.95
Capacitance：0.015 uF
Subcategory：Transistors
Technology：Si
Terminal Position：BOTTOM
Terminal Form：PIN/PEG
Peak Reflow Temperature (Cel)：NOT SPECIFIED
Reach Compliance Code：compliant
Reference Standard：MIL-19500/455E
JESD-30 Code：O-MBFM-P2
Qualification Status：Qualified
Polarity：NPN
Configuration：Single
Power Dissipation：1.2
Case Connection：COLLECTOR
Output Power：Not Required(W)
Power - Max：1.2 W
Transistor Application：SWITCHING
Polarity/Channel Type：NPN
Product Type：BJTs - Bipolar Transistors
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：300 V
Max Collector Current：5 A
DC Current Gain (hFE) (Min) @ Ic, Vce：25 @ 1A, 5V
Current - Collector Cutoff (Max)：200nA
JEDEC-95 Code：TO-5
Vce Saturation (Max) @ Ib, Ic：1V @ 1A, 5A
Voltage - Collector Emitter Breakdown (Max)：300 V
Frequency - Transition：-
Collector Base Voltage (VCBO)：400 V
Emitter Base Voltage (VEBO)：6 V
Collector Current-Max (IC)：5 A
DC Current Gain-Min (hFE)：25
Continuous Collector Current：5
Collector-Emitter Voltage-Max：300 V
Product Category：Bipolar Transistors - BJT
Product Length：4.5 mm
Product Width：4.5 x 6.4 x 1.5
Radiation Hardening：No

在庫數 112

小計金額 $0.00000

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JANTX2N5667