画像はあくまで参考です。
2N3585
-
Microchip
-
Transistors - Bipolar (BJT) - Single
- TO-213AA, TO-66-2
- Trans GP BJT NPN 300V 2A 3-Pin(2 Tab) TO-66
Date Sheet
在庫數 117
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:Production (Last Updated: 2 months ago)
- Mounting Type:Through Hole
- Package / Case:TO-213AA, TO-66-2
- Mount:Through Hole
- Number of Pins:3
- Supplier Device Package:TO-66 (TO-213AA)
- Transistor Polarity:NPN
- Package:Bulk
- Current-Collector (Ic) (Max):2 A
- Base Product Number:2N3585
- Mfr:Microchip Technology
- Product Status:Active
- Emitter-Base Voltage:6(V)
- Package Type:TO-66
- Collector-Base Voltage:500(V)
- Category:Bipolar Power
- Operating Temp Range:-65C to 200C
- Collector Current (DC):2(A)
- Number of Elements:1
- Rad Hardened:No
- DC Current Gain:25
- Mounting:Through Hole
- Schedule B:8541290080, 8541290080/8541290080, 8541290080/8541290080/8541290080, 8541290080/8541290080/8541290080/8541290080
- RoHS:Compliant
- Emitter- Base Voltage VEBO:6 V
- Pd - Power Dissipation:2.5 W
- Maximum Operating Temperature:+ 200 C
- Collector-Emitter Saturation Voltage:750 mV
- Unit Weight:1.612020 oz
- Minimum Operating Temperature:- 65 C
- Factory Pack QuantityFactory Pack Quantity:1
- Mounting Styles:Through Hole
- Gain Bandwidth Product fT:-
- Manufacturer:Microchip
- Brand:Microchip Technology
- Maximum DC Collector Current:2 A
- Collector- Emitter Voltage VCEO Max:300 V
- Operating Temperature:-65°C ~ 200°C (TJ)
- Series:-
- Packaging:Tray
- Max Operating Temperature:200 °C
- Min Operating Temperature:-65 °C
- Subcategory:Transistors
- Max Power Dissipation:2.5 W
- Technology:Si
- Pin Count:2 +Tab
- Polarity:NPN
- Configuration:Single
- Power Dissipation:2.5(W)
- Output Power:Not Required(W)
- Power - Max:2.5 W
- Product Type:BJTs - Bipolar Transistors
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):300 V
- Max Collector Current:2 A
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 100mA, 10V
- Current - Collector Cutoff (Max):5mA
- Vce Saturation (Max) @ Ib, Ic:750mV @ 125mA, 1A
- Voltage - Collector Emitter Breakdown (Max):300 V
- Frequency - Transition:-
- Collector Base Voltage (VCBO):500 V
- Emitter Base Voltage (VEBO):6 V
- Continuous Collector Current:2
- Product Category:Bipolar Transistors - BJT
- Radiation Hardening:No
在庫數 117
小計金額 $0.00000











