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BAS21HT1G
-
ON Semiconductor
-
Diodes - Rectifiers - Single
- SC-76, SOD-323
- DIODE GEN PURP 250V 200MA SOD323
Date Sheet
在庫數 75000
- 1+: $0.10868
- 10+: $0.10253
- 100+: $0.09672
- 500+: $0.09125
- 1000+: $0.08608
小計金額 $0.10868
仕様 よくある質問
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:SC-76, SOD-323
- Number of Pins:2
- Diode Element Material:SILICON
- Breakdown Voltage / V:250V
- Operating Temperature (Max):150°C
- Operating Temperature (Min):-55°C
- Number of Elements:1
- Packaging:Cut Tape (CT)
- Published:2005
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 3 days ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- HTS Code:8541.10.00.70
- Capacitance:5pF
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):260
- Current Rating:200mA
- Time@Peak Reflow Temperature-Max (s):40
- Base Part Number:BAS21H
- Element Configuration:Single
- Speed:Small Signal =< 200mA (Io), Any Speed
- Diode Type:Standard
- Current - Reverse Leakage @ Vr:100nA @ 200V
- Power Dissipation:200mW
- Voltage - Forward (Vf) (Max) @ If:1.25V @ 200mA
- Current - Output:200mA
- Forward Current:200mA
- Max Reverse Leakage Current:100nA
- Operating Temperature - Junction:-55°C~150°C
- Halogen Free:Halogen Free
- Current - Average Rectified (Io):200mA DC
- Forward Voltage:1V
- Max Reverse Voltage (DC):250V
- Average Rectified Current:200mA
- Reverse Recovery Time:50 ns
- Peak Reverse Current:100μA
- Max Repetitive Reverse Voltage (Vrrm):250V
- Capacitance @ Vr, F:5pF @ 0V 1MHz
- Peak Non-Repetitive Surge Current:5A
- Max Forward Surge Current (Ifsm):625mA
- Recovery Time:50 ns
- Height:1mm
- Length:1.8mm
- Width:1.35mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 75000
- 1+: $0.10868
- 10+: $0.10253
- 100+: $0.09672
- 500+: $0.09125
- 1000+: $0.08608
小計金額 $0.10868
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