BAS116-7-F

Diodes Incorporated
Diodes - Rectifiers - Single
TO-236-3, SC-59, SOT-23-3
DIODE GEN PURP 85V 215MA SOT23-3
Date Sheet

在庫數 42000

1+： $0.20895
10+： $0.19712
100+： $0.18596
500+： $0.17544
1000+： $0.16551

小計金額 $0.20895

仕様よくある質問

Factory Lead Time：19 Weeks
Contact Plating：Tin
Mount：Surface Mount
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Number of Pins：3
Weight：7.994566mg
Diode Element Material：SILICON
Operating Temperature (Max)：150°C
Operating Temperature (Min)：-65°C
Number of Elements：1
Packaging：Tape & Reel (TR)
Published：2003
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Additional Feature：LOW LEAKAGE CURRENT
HTS Code：8541.10.00.70
Capacitance：2pF
Power Rating：250mW
Voltage - Rated DC：85V
Max Power Dissipation：150mW
Terminal Position：DUAL
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：215mA
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：BAS116
Element Configuration：Single
Speed：Standard Recovery >500ns, > 200mA (Io)
Diode Type：Standard
Current - Reverse Leakage @ Vr：5nA @ 75V
Power Dissipation：250mW
Voltage - Forward (Vf) (Max) @ If：1.25V @ 150mA
Current - Output：250mA
Forward Current：150mA
Operating Temperature - Junction：-65°C~150°C
Max Surge Current：4A
Current - Average Rectified (Io)：215mA DC
Forward Voltage：1.25V
Max Reverse Voltage (DC)：85V
Average Rectified Current：215mA
Reverse Recovery Time：3 μs
Peak Reverse Current：5nA
Max Repetitive Reverse Voltage (Vrrm)：85V
Capacitance @ Vr, F：2pF @ 0V 1MHz
Peak Non-Repetitive Surge Current：4A
Max Forward Surge Current (Ifsm)：4A
Recovery Time：3 μs
Reverse Voltage (DC)：85V
Height：1mm
Length：3.05mm
Width：1.4mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 42000

1+： $0.20895
10+： $0.19712
100+： $0.18596
500+： $0.17544
1000+： $0.16551

小計金額 $0.20895

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Phone

BAS116-7-F