STGF19NC60HD

STMicroelectronics
Transistors - IGBTs - Single
TO-220-3 Full Pack
STMICROELECTRONICS STGF19NC60HD IGBT Single Transistor, 16 A, 2.5 V, 35 W, 600 V, TO-220FP, 3 Pins
Date Sheet

在庫數 24

小計金額 $0.00000

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 7 months ago)
Factory Lead Time：8 Weeks
Mount：Through Hole
Mounting Type：Through Hole
Package / Case：TO-220-3 Full Pack
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：600V
Collector-Emitter Saturation Voltage：1.8V
Number of Elements：1
Test Conditions：390V, 12A, 10 Ω, 15V
Turn Off Delay Time：97 ns
Operating Temperature：-55°C~150°C TJ
Packaging：Tube
Series：PowerMESH™
JESD-609 Code：e3
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：3
ECCN Code：EAR99
Terminal Finish：Matte Tin (Sn)
Voltage - Rated DC：600V
Max Power Dissipation：32W
Current Rating：9A
Base Part Number：STGF19
Pin Count：3
Element Configuration：Single
Power Dissipation：35W
Case Connection：ISOLATED
Input Type：Standard
Turn On Delay Time：25 ns
Transistor Application：POWER CONTROL
Rise Time：7ns
Drain to Source Voltage (Vdss)：600V
Polarity/Channel Type：N-CHANNEL
Collector Emitter Voltage (VCEO)：600V
Max Collector Current：16A
Reverse Recovery Time：31 ns
Continuous Drain Current (ID)：16A
JEDEC-95 Code：TO-220AB
Turn On Time：32 ns
Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 12A
Turn Off Time-Nom (toff)：272 ns
Gate Charge：53nC
Current - Collector Pulsed (Icm)：60A
Td (on/off) @ 25°C：25ns/97ns
Switching Energy：85μJ (on), 189μJ (off)
Gate-Emitter Voltage-Max：20V
Gate-Emitter Thr Voltage-Max：5.75V
Height：16.4mm
Length：10.4mm
Width：4.6mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 24

小計金額 $0.00000

類似スペック製品

STGF19NC60HD STMicroelectronics
見積かごへ在庫數 24
HGTP7N60B3D ON Semiconductor
見積かごへ在庫數 2403
SGS13N60UFDTU ON Semiconductor
見積かごへ在庫數 102510
IRG4IBC20UDPBF Infineon Technologies
見積かごへ在庫數 90
IRG4IBC20FDPBF Infineon Technologies
見積かごへ在庫數 34

Phone

STGF19NC60HD