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RGF1M
-
ON Semiconductor
-
Diodes - Rectifiers - Single
- DO-214AC, SMA
- DIODE GEN PURP 1KV 1A SMA
Date Sheet
在庫數 90000
- 1+: $0.27089
- 10+: $0.25556
- 100+: $0.24109
- 500+: $0.22744
- 1000+: $0.21457
小計金額 $0.27089
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time:10 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:DO-214AC, SMA
- Number of Pins:2
- Diode Element Material:SILICON
- Number of Elements:1
- Packaging:Tape & Reel (TR)
- Published:2001
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:TIN
- Max Operating Temperature:175°C
- Min Operating Temperature:-65°C
- HTS Code:8541.10.00.80
- Capacitance:8.5pF
- Voltage - Rated DC:1kV
- Terminal Position:DUAL
- Terminal Form:C BEND
- Peak Reflow Temperature (Cel):260
- Current Rating:1A
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:RGF1M
- Voltage:1kV
- Element Configuration:Single
- Speed:Fast Recovery =< 500ns, > 200mA (Io)
- Current:1A
- Diode Type:Standard
- Current - Reverse Leakage @ Vr:5μA @ 1000V
- Power Dissipation:1.76W
- Output Current:1A
- Voltage - Forward (Vf) (Max) @ If:1.3V @ 1A
- Forward Current:1A
- Operating Temperature - Junction:-65°C~175°C
- Max Surge Current:30A
- Voltage - DC Reverse (Vr) (Max):1000V
- Forward Voltage:1.3V
- Max Reverse Voltage (DC):1kV
- Average Rectified Current:1A
- Reverse Recovery Time:500 ns
- Peak Reverse Current:5μA
- Max Repetitive Reverse Voltage (Vrrm):1kV
- Capacitance @ Vr, F:8.5pF @ 4V 1MHz
- Peak Non-Repetitive Surge Current:30A
- Reverse Voltage:1kV
- Max Forward Surge Current (Ifsm):30A
- Recovery Time:500 ns
- Height:2.2mm
- Length:4.75mm
- Width:2.95mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free












