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FS8M
-
ON Semiconductor
-
Diodes - Rectifiers - Single
- TO-277, 3-PowerDFN
- DIODE GEN PURP 1KV 8A TO277-3
Date Sheet
在庫數 10
- 1+: $1.30375
- 10+: $1.22995
- 100+: $1.16033
- 500+: $1.09465
- 1000+: $1.03269
小計金額 $1.30375
仕様 よくある質問
- Factory Lead Time:23 Weeks
- Mount:Surface Mount
- Mounting Type:Surface Mount
- Package / Case:TO-277, 3-PowerDFN
- Weight:113.6mg
- Diode Element Material:SILICON
- Operating Temperature (Max):150°C
- Operating Temperature (Min):-55°C
- Number of Elements:1
- Packaging:Tape & Reel (TR)
- Series:Automotive, AEC-Q101
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:ACTIVE (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Applications:GENERAL PURPOSE
- Additional Feature:LOW LEAKAGE CURRENT
- HTS Code:8541.10.00.80
- Terminal Position:DUAL
- Terminal Form:FLAT
- Peak Reflow Temperature (Cel):260
- Time@Peak Reflow Temperature-Max (s):NOT SPECIFIED
- JESD-30 Code:R-PDSO-F3
- Element Configuration:Single
- Speed:Standard Recovery >500ns, > 200mA (Io)
- Diode Type:Standard
- Current - Reverse Leakage @ Vr:5μA @ 1000V
- Voltage - Forward (Vf) (Max) @ If:1.1V @ 8A
- Case Connection:CATHODE
- Forward Current:8A
- Operating Temperature - Junction:-55°C~150°C
- Output Current-Max:8A
- Voltage - DC Reverse (Vr) (Max):1000V
- Max Reverse Voltage (DC):1kV
- Average Rectified Current:8A
- Number of Phases:1
- Reverse Recovery Time:3.37 μs
- Max Repetitive Reverse Voltage (Vrrm):1kV
- Capacitance @ Vr, F:118pF @ 0V 1MHz
- Reverse Current-Max:5μA
- Max Forward Surge Current (Ifsm):230A
- REACH SVHC:not_compliant
- RoHS Status:ROHS3 Compliant











