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PD85035-E
-
STMicroelectronics
-
Transistors - FETs, MOSFETs - RF
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Trans RF MOSFET N-CH 40V 8A 3-Pin PowerSO-10RF (Formed lead) Tube
Date Sheet
在庫數 500
- 1+: $26.67676
- 10+: $25.16675
- 100+: $23.74222
- 500+: $22.39832
- 1000+: $21.13049
小計金額 $26.67676
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 8 months ago)
- Factory Lead Time:25 Weeks
- Mount:Surface Mount
- Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Number of Pins:3
- Number of Elements:1
- Packaging:Tube
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):3 (168 Hours)
- Number of Terminations:2
- ECCN Code:EAR99
- Terminal Finish:Matte Tin (Sn)
- Max Operating Temperature:165°C
- Min Operating Temperature:-65°C
- Additional Feature:HIGH RELIABILITY
- Max Power Dissipation:95W
- Terminal Position:DUAL
- Terminal Form:GULL WING
- Peak Reflow Temperature (Cel):250
- Current Rating:8A
- Frequency:870MHz
- Time@Peak Reflow Temperature-Max (s):30
- Base Part Number:PD85035
- Pin Count:10
- JESD-30 Code:R-PDSO-G2
- Element Configuration:Single
- Operating Mode:ENHANCEMENT MODE
- Power Dissipation:95W
- Case Connection:SOURCE
- Current - Test:350mA
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:N-CHANNEL
- Transistor Type:LDMOS
- Continuous Drain Current (ID):8A
- Gate to Source Voltage (Vgs):15V
- Gain:17dB
- Max Output Power:40W
- Drain Current-Max (Abs) (ID):8A
- Drain to Source Breakdown Voltage:40V
- Power - Output:15W
- FET Technology:METAL-OXIDE SEMICONDUCTOR
- Voltage - Test:13.6V
- Min Breakdown Voltage:40V
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free
在庫數 500
- 1+: $26.67676
- 10+: $25.16675
- 100+: $23.74222
- 500+: $22.39832
- 1000+: $21.13049
小計金額 $26.67676
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