MJD31CT4G

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TRANS NPN 100V 3A DPAK
Date Sheet

在庫數 13090

1+： $0.63720
10+： $0.60113
100+： $0.56711
500+： $0.53501
1000+： $0.50472

小計金額 $0.63720

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 6 days ago)
Factory Lead Time：8 Weeks
Surface Mount：YES
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins：3
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：100V
Collector-Emitter Saturation Voltage：1.2V
Frequency - Gain Bandwidth Product (GBP)：3MHz
Power Dissipation (Max)：1.56W
Number of Elements：1
hFEMin：25
Operating Temperature：-65°C~150°C TJ
Packaging：Tape & Reel (TR)
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Voltage - Rated DC：100V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：3A
Frequency：3MHz
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MJD31
JESD-30 Code：R-PSSO-G2
Element Configuration：Single
Power Dissipation：1.56W
Case Connection：COLLECTOR
Transistor Application：AMPLIFIER
Polarity/Channel Type：NPN
Transistor Type：NPN
Collector Emitter Voltage (VCEO)：100V
Max Collector Current：3A
DC Current Gain (hFE) (Min) @ Ic, Vce：10 @ 3A 4V
Current - Collector Cutoff (Max)：50μA
Vce Saturation (Max) @ Ib, Ic：1.2V @ 375mA, 3A
Transition Frequency：3MHz
Max Breakdown Voltage：100V
Collector Base Voltage (VCBO)：100V
Emitter Base Voltage (VEBO)：5V
Height：2.38mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 13090

1+： $0.63720
10+： $0.60113
100+： $0.56711
500+： $0.53501
1000+： $0.50472

小計金額 $0.63720

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MJD31CT4G