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PN2222ATA
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- TRANS NPN 40V 1A TO92
Date Sheet
在庫數 10070
- 1+: $0.24200
- 10+: $0.22830
- 100+: $0.21538
- 500+: $0.20319
- 1000+: $0.19169
小計金額 $0.24200
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 2 days ago)
- Factory Lead Time:6 Weeks
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins:3
- Weight:240mg
- Transistor Element Material:SILICON
- Collector-Emitter Breakdown Voltage:40V
- Collector-Emitter Saturation Voltage:1V
- Number of Elements:1
- hFEMin:100
- Operating Temperature:-55°C~150°C TJ
- Packaging:Tape & Box (TB)
- Published:2007
- JESD-609 Code:e3
- Pbfree Code:yes
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Terminal Finish:Tin (Sn)
- Voltage - Rated DC:40V
- Max Power Dissipation:625mW
- Terminal Position:BOTTOM
- Current Rating:1A
- Frequency:300MHz
- Base Part Number:PN2222
- Element Configuration:Single
- Power Dissipation:625mW
- Transistor Application:SWITCHING
- Gain Bandwidth Product:300MHz
- Polarity/Channel Type:NPN
- Transistor Type:NPN
- Collector Emitter Voltage (VCEO):40V
- Max Collector Current:1A
- DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA 10V
- Current - Collector Cutoff (Max):10nA ICBO
- Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
- Transition Frequency:300MHz
- Max Breakdown Voltage:25V
- Collector Base Voltage (VCBO):75V
- Emitter Base Voltage (VEBO):6V
- Turn Off Time-Max (toff):285ns
- Height:5.33mm
- Length:5.2mm
- Width:4.19mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
- Lead Free:Lead Free












