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BD140-16
-
STMicroelectronics
-
Transistors - Bipolar (BJT) - Single
- TO-225AA, TO-126-3
- Bipolar Transistors - BJT PNP Silicon Trnsistr
Date Sheet
在庫數 1
小計金額 $0.00000
仕様 よくある質問
- Lifecycle Status:ACTIVE (Last Updated: 6 months ago)
- Factory Lead Time:8 Weeks
- Contact Plating:Tin
- Mount:Through Hole
- Mounting Type:Through Hole
- Package / Case:TO-225AA, TO-126-3
- Number of Pins:3
- Transistor Element Material:SILICON
- Manufacturer Package Identifier:SOT-32-0016114E
- Collector-Emitter Breakdown Voltage:80V
- Collector-Emitter Saturation Voltage:-500mV
- Current-Collector (Ic) (Max):1.5A
- Power Dissipation (Max):1.25W
- Number of Elements:1
- hFEMin:25
- Operating Temperature:150°C TJ
- Packaging:Tube
- JESD-609 Code:e3
- Part Status:Active
- Moisture Sensitivity Level (MSL):1 (Unlimited)
- Number of Terminations:3
- ECCN Code:EAR99
- Base Part Number:BD140
- Element Configuration:Single
- Power Dissipation:1.25W
- Transistor Application:AMPLIFIER
- Polarity/Channel Type:PNP
- Transistor Type:PNP
- Collector Emitter Voltage (VCEO):-80V
- Max Collector Current:-3A
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 2V 150MA
- Current - Collector Cutoff (Max):100nA ICBO
- Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
- Transition Frequency:75MHz
- Max Breakdown Voltage:80V
- Collector Base Voltage (VCBO):-80V
- Emitter Base Voltage (VEBO):-5V
- Max Junction Temperature (Tj):150°C
- Height:13.2mm
- Length:7.8mm
- Width:2.7mm
- REACH SVHC:No SVHC
- Radiation Hardening:No
- RoHS Status:ROHS3 Compliant
在庫數 1
小計金額 $0.00000











