MJD122G

ON Semiconductor
Transistors - Bipolar (BJT) - Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Darlington Transistors 8A 100V Bipolar Power NPN
Date Sheet

在庫數 60

1+： $0.98692
10+： $0.93106
100+： $0.87835
500+： $0.82864
1000+： $0.78173

小計金額 $0.98692

仕様よくある質問

Lifecycle Status：ACTIVE (Last Updated: 2 days ago)
Factory Lead Time：8 Weeks
Contact Plating：Tin
Mounting Type：Surface Mount
Package / Case：TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount：YES
Number of Pins：3
Weight：4.535924g
Transistor Element Material：SILICON
Collector-Emitter Breakdown Voltage：100V
Collector-Emitter Saturation Voltage：2V
Power Dissipation (Max)：1.75W
Number of Elements：1
hFEMin：1000
Operating Temperature：-65°C~150°C TJ
Packaging：Tube
Published：2005
JESD-609 Code：e3
Pbfree Code：yes
Part Status：Active
Moisture Sensitivity Level (MSL)：1 (Unlimited)
Number of Terminations：2
ECCN Code：EAR99
Voltage - Rated DC：100V
Terminal Form：GULL WING
Peak Reflow Temperature (Cel)：260
Current Rating：8A
Time@Peak Reflow Temperature-Max (s)：40
Base Part Number：MJD122
JESD-30 Code：R-PSSO-G2
Polarity：NPN
Element Configuration：Single
Power Dissipation：1.75W
Case Connection：COLLECTOR
Transistor Application：SWITCHING
Halogen Free：Halogen Free
Transistor Type：NPN - Darlington
Collector Emitter Voltage (VCEO)：100V
Max Collector Current：8A
DC Current Gain (hFE) (Min) @ Ic, Vce：1000 @ 4A 4V
Current - Collector Cutoff (Max)：10μA
Vce Saturation (Max) @ Ib, Ic：4V @ 80mA, 8A
Transition Frequency：4MHz
Frequency - Transition：4MHz
Collector Base Voltage (VCBO)：100V
Emitter Base Voltage (VEBO)：5V
Continuous Collector Current：8A
Height：2.38mm
Length：6.73mm
Width：6.22mm
REACH SVHC：No SVHC
Radiation Hardening：No
RoHS Status：ROHS3 Compliant
Lead Free：Lead Free

在庫數 60

1+： $0.98692
10+： $0.93106
100+： $0.87835
500+： $0.82864
1000+： $0.78173

小計金額 $0.98692

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MJD122G