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BD180G
-
ON Semiconductor
-
Transistors - Bipolar (BJT) - Single
- TO-225AA, TO-126-3
- TRANS PNP 80V 1A TO225
Date Sheet
在庫數 4610
小計金額 $0.00000
仕様 よくある質問
- Factory Lead Time：2 Weeks
- Lifecycle Status：ACTIVE (Last Updated: 3 days ago)
- Surface Mount：NO
- Package / Case：TO-225AA, TO-126-3
- Mounting Type：Through Hole
- Number of Pins：3
- Transistor Element Material：SILICON
- hFEMin：15
- Number of Elements：1
- Power Dissipation (Max)：30W
- Frequency - Gain Bandwidth Product (GBP)：3MHz
- Collector-Emitter Saturation Voltage：800mV
- Collector-Emitter Breakdown Voltage：80V
- Published：2006
- Packaging：Bulk
- Operating Temperature：-65°C~150°C TJ
- JESD-609 Code：e3
- Pbfree Code：yes
- Part Status：Active
- Moisture Sensitivity Level (MSL)：1 (Unlimited)
- Number of Terminations：3
- ECCN Code：EAR99
- Terminal Finish：Tin (Sn)
- Voltage - Rated DC：-80V
- Peak Reflow Temperature (Cel)：260
- Current Rating：-3A
- Frequency：3MHz
- Time@Peak Reflow Temperature-Max (s)：40
- Base Part Number：BD180
- Element Configuration：Single
- Power Dissipation：30W
- Transistor Application：AMPLIFIER
- Polarity/Channel Type：PNP
- Transistor Type：PNP
- Collector Emitter Voltage (VCEO)：80V
- Max Collector Current：1A
- DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA 2V
- Current - Collector Cutoff (Max)：1mA ICBO
- Vce Saturation (Max) @ Ib, Ic：800mV @ 100mA, 1A
- Transition Frequency：3MHz
- Collector Base Voltage (VCBO)：80V
- Emitter Base Voltage (VEBO)：5V
- Width：2.66mm
- Length：7.74mm
- Height：11.04mm
- RoHS Status：ROHS3 Compliant
- Radiation Hardening：No
- REACH SVHC：No SVHC
- Lead Free：Lead Free
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